Enhancement of Light Emission from Silicon by Utilizing Photonic Nanostructures : Photonic Devices using Nanofabrication TYechnology and Their ApplicationsIWAMOTO, Satoshi; ARAKAWA, Yasuhiko.IEICE transactions on electronics. 2012, Vol 95, Num 2, pp 206-212, issn 0916-8524, 7 p.Article

Progress in quantum dots for nanophotonic devicesARAKAWA, Yasuhiko.DRC : Device research conference. 2004, isbn 0-7803-8284-6, 1Vol, p. 153Conference Paper

Pentacene-based organic field-effect transistors : thin films of molecular organic materialsKITAMURA, Masatoshi; ARAKAWA, Yasuhiko.Journal of physics. Condensed matter (Print). 2008, Vol 20, Num 18, issn 0953-8984, 184011.1-184011.16Article

Quantum-Dot Semiconductor Optical Amplifiers : Ultra-fast gain response, greatly expanded bandwidth, low noise figure, and improved efficiency of four-wave-mixing wavelength conversion are some of the promising characteristics of these cost-effective amplifiersAKIYAMA, Tomoyuki; SUGAWARA, Mitsuru; ARAKAWA, Yasuhiko et al.Proceedings of the IEEE. 2007, Vol 95, Num 9, pp 1757-1766, issn 0018-9219, 10 p.Article

Photonic bandgap tuning with thermo-optic effectTAO CHU; YAMADA, Hirohito; ISHIDA, Satomi et al.Lasers and Electro-optics Society. 2004, isbn 0-7803-8557-8, 2Vol, Vol2, 811-812Conference Paper

Optical add-drop multiplexers based on Si-wire waveguidesYAMADA, Hirohito; CHU, Tao; ISHIDA, Satomi et al.Lasers and Electro-optics Society. 2004, isbn 0-7803-8557-8, 2Vol, Vol2, 857-858Conference Paper

Physics and simulation of optoelectronic devices IX (San Jose CA, 22-26 January 2001)Arakawa, Yasuhiko; Blood, Peter; Osinski, Marek et al.SPIE proceedings series. 2001, isbn 0-8194-3961-4, XII, 760 p, isbn 0-8194-3961-4Conference Proceedings

Diodes laser pour les télécommunications optiques = Laser diodes for optical communicationsGUIMARD, Denis; TATEBAYASHI, Jun; ARAKAWA, Yasuhiko et al.Techniques de l'ingénieur. Electronique. 2006, Vol E1, Num RE48, issn 0399-4120, RE48.1-RE48.12Article

Diodes laser pour les télécommunications optiques = Laser diodes used in optical telecommunicationsGUIMARD, Denis; TATEBAYASHI, Jun; ARAKAWA, Yasuhiko et al.Techniques de l'ingénieur. Télécoms. 2006, Vol TEA1, Num RE48, issn 1632-3823, RE48.1-RE48.12Article

Selective-area growth of thin GaN nanowires by MOCVDCHOI, Kihyun; ARITA, Munetaka; ARAKAWA, Yasuhiko et al.Journal of crystal growth. 2012, Vol 357, pp 58-61, issn 0022-0248, 4 p.Article

Physics and simulation of optoelectronic devices X (San Jose CA, 21-25 January 2002)Blood, Peter; Osinski, Marek; Arakawa, Yasuhiko et al.SPIE proceedings series. 2002, isbn 0-8194-4385-9, XII, 678 p, isbn 0-8194-4385-9Conference Proceedings

High performance inkjet-printed C₆₀ fullerene thin-film transistors: Toward a low-cost and reproducible solution processKANG, Woogun; KITAMURA, Masatoshi; ARAKAWA, Yasuhiko et al.Organic electronics (Print). 2013, Vol 14, Num 2, pp 644-648, issn 1566-1199, 5 p.Article

Optoelectronic devices based on quantum dotsBHATTACHARYA, Pallab; BIMBERG, Dieter; ARAKAWA, Yasuhiko et al.Proceedings of the IEEE. 2007, Vol 95, Num 9, issn 0018-9219, 170 p.Serial Issue

Progress in GaN-based QDs for optoelectronics applicationsARAKAWA, Yasuhiko.Vacuum science and technology : nitrides as seen by the technology 2002. 2002, pp 265-284, isbn 81-7736-198-8, 20 p.Book Chapter

Quantum communications realized II (28-29 January 2009, San Jose, California, United States)Arakawa, Yasuhiko; Sasaki, Masahide; Sotobayashi, Hideyuki et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7236, issn 0277-786X, isbn 978-0-8194-7482-7 0-8194-7482-7, 1Vol, various pagings, isbn 978-0-8194-7482-7 0-8194-7482-7Conference Proceedings

Optimizing the GaAs capping layer growth of 1.3 μm InAs/GaAs quantum dots by a combined two-temperature and annealing process at low temperaturesTAO YANG; NISHIOKA, Masao; ARAKAWA, Yasuhiko et al.Journal of crystal growth. 2008, Vol 310, Num 24, pp 5469-5472, issn 0022-0248, 4 p.Article

Quantum communications realized (10-12 September 2007, Boston, Massachusetts, USA)Arakawa, Yasuhiko; Sasaki, Masahide.Proceedings of SPIE, the International Society for Optical Engineering. 2007, issn 0277-786X, isbn 978-0-8194-6940-3, 1Vol, pagination multiple, isbn 978-0-8194-6940-3Conference Proceedings

Test and measurement on quantum key distribution systemsTOMITA, Akihisa.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7236, issn 0277-786X, isbn 978-0-8194-7482-7 0-8194-7482-7, 1Vol, 72360K.1-72360K.7Conference Paper

Custom Hardware to Eliminate Bottlenecks in QKD Throughput PerformanceMINK, Alan.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 678014.1-678014.6, issn 0277-786X, isbn 978-0-8194-6940-3, 1VolConference Paper

Visible InGaN/GaN Quantum-Dot Materials and Devices : There has been rapid progress in light emitting diodes and lasers based on nitride semiconductors, with the development of nitride quantum-dot lasers as the next challengeGRANDJEAN, Nicolas; ILEGEMS, Marc.Proceedings of the IEEE. 2007, Vol 95, Num 9, pp 1853-1865, issn 0018-9219, 13 p.Article

Complementary use of organic and oxide semiconductorsNA, Jong H; KITAMURA, Masatoshi; ARAKAWA, Yasuhiko et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7603, issn 0277-786X, isbn 978-0-8194-7999-0 0-8194-7999-3, 1Vol, 760311.1-760311.11Conference Paper

Cathodoluminescence characterization of GaN quantum dots grown on 6H-SiC substrate by metal-organic chemical vapor depositionYONGZHAO YAO; SEKIGUCHI, Takashi; SAKUMA, Yoshiki et al.Scripta materialia. 2006, Vol 55, Num 8, pp 679-682, issn 1359-6462, 4 p.Article

Formation of Ge-diffusion-suppressed GaAs layers and InAs quantum dots on Ge/Si substratesKAWAGUCHI, Kenichi; EBE, Hiroji; EKAWA, Mitsuru et al.Journal of crystal growth. 2010, Vol 312, Num 20, pp 2919-2922, issn 0022-0248, 4 p.Article

Quantum key distribution system for metropolitan-area networksTOMITA, A.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 678012.1-678012.9, issn 0277-786X, isbn 978-0-8194-6940-3, 1VolConference Paper

Optical characteristics of one-dimensional photonic crystals composed of high-aspect-ratio Si walls fabricated on V-grooved waferHOSOMI, Kazuhiko; FUKAMACHI, Toshihiko; YAMADA, Hiroji et al.Photonics and nanostructures (Print). 2006, Vol 4, Num 1, pp 30-34, issn 1569-4410, 5 p.Article